Samsung Electronics announced that it has started initial production of its 3-nanometer (nm) process node applying Gate-All-Around (GAA) transistor architecture.
Multi-Bridge-Channel FET (MBCFET™), Samsung’s GAA technology implemented for the first time ever, defies the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level, while also enhancing performance by increasing drive current capability.
Samsung is starting the first application of the nanosheet transistor with semiconductor chips for high performance, low power computing application and plans to expand to mobile processors.
“Samsung has grown rapidly as we continue to demonstrate leadership in applying next-generation technologies to manufacturing, such as foundry industry’s first High-K Metal Gate, FinFET, as well as EUV. We seek to continue this leadership with the world’s first 3nm process with the MBCFET™,” said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. “We will continue active innovation in competitive technology development and build processes that help expedite achieving maturity of technology.”
Samsung’s proprietary technology utilizes nanosheets with wider channels, which allow higher performance and greater energy efficiency compared to GAA technologies using nanowires with narrower channels. Utilizing the 3nm GAA technology, Samsung will be able to adjust the channel width of the nanosheet in order to optimize power usage and performance to meet various customer needs.
In addition, the design flexibility of GAA is highly advantageous for Design Technology Co-Optimization (DTCO),1 which helps boost Power, Performance, Area (PPA) benefits. Compared to 5nm process, the first-generation 3nm process can reduce power consumption by up to 45%, improve performance by 23% and reduce area by 16% compared to 5nm, while the second-generation 3nm process is to reduce power consumption by up to 50%, improve performance by 30% and reduce area by 35%
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