In FAST SMART CHARGERS GaN Technology is a Future and Indochin (Fast Charging Expert) Provides a wide array of Mobile Chargers with Fast Charging GaN Technology
Why use GaN Technology?
Because GaN is a very hard, mechanically stable wide bandgap semiconductor. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC), and silicon (Si). By growing a GaN epi layer on the top of silicon, the existing silicon manufacturing infrastructure can be used, eliminating the need for costly specialised production sites and leveraging readily available large diameter silicon wafers at a low cost.
GaN is used in the production of semiconductor power devices as well as RF components and light-emitting diodes (LEDs). GaN has demonstrated the capability to be the displacement technology for silicon semiconductors in power conversion, RF, and analogue applications.
Indochin (Fast Charging Expert) is a leading manufacturer of high-quality GaN based FAST SMART CHARGERS and ADAPTERS with the widest range in India as an OEM manufacturer.
During an interaction with Mobility magazine, Mr. Hemant Kumar, Director-Operations, Indochin (Fast Charging Expert) says that they are making 25w GaN PD, 33w GaN PD, 45w GaN PD, 65w GaN PD, 95w GaN PD, 185w GaN PD and so many more products are in process of development.
He also elaborates that how the Company uses GaN Technology to make their products more efficient and faster. The Company makes use of GaN technology as Gallium Nitride (GaN) based HEMTs feature faster switching speed, higher thermal conductivity, and lower on-resistance than comparable silicon-based solutions. These features of GaN Chips on integrated circuits allows Indochin to increase their Efficiency, Reliability, making SMART SHAPES which are easy to carry due to shrink in sizes and reduce the cost of a wide variety of power conversion systems.
Today, Indochin’s GaN Based FAST SMART CHARGERS are the most preferred by the customers.
Mr. Tarun Chadha, Managing Director, Indochin (Fast Charging Expert) also add in details, what are the reasons of Rise of Gallium Nitride Semiconductors
The leading candidate for taking electronic performance to the next level and a reactivation of positive momentum of Moore’s Law is gallium nitride. GaN’s ability to conduct electrons more than 1000 times more efficiently than silicon, while being able to be manufactured at a lower cost than silicon has now been well established. Silicon is out of gas, and a new, higher performing semiconductor material is emerging – GaN is on the rise.
The Age of GaN is Underway
With the increase in transistor and IC performance made possible by GaN materials, now is the time for innovative power design engineers to take advantage of GaN attributes:
- lower on-resistance giving lower conductance losses
- faster devices yielding less switching losses
- less capacitance resulting in fewer losses when charging and discharging devices
- less power needed to drive the circuit
- smaller devices taking up less space on the printed circuit board
“Today, Indochin GaN Based FAST SMART CHARGERS are the most preferred by the customers.”
Mr. Tarun Chadha foresees the GaN Technology. He adds, “The GaN will be the Future Technology for making FAST SMART CHARGERS.”
Indochin (Fast Charging Expert) always strives to deliver high-quality services at affordable prices. It is always focused on the fact that the market has consolidated and the consumers are both Price & conscious. Indochin always focus on innovation and treats it as the key differentiation among the products.
We are the supporters of Make in India initiative, we offer unique, Future-Centric, High-end Technology based products with the most affordable prices than any other Indian or Foreign based OEM manufacturer.
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